Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride

Both HgTe and CdTe films have been grown by metalorganic chemical vapor deposition using a novel tellurium source, diallyltelluride. This compound is found to be less stable than previously examined organotellurium compounds and permits film growth at lower substrate temperatures. This reduced stability is consistent with the presence of double bonds in diallyltelluride compared to single bonds present in alkyl tellurides. Specular HgTe films have been grown at temperatures as low as 180 °C and x-ray analysis indicates that this material is of good crystalline quality.