Answers are grounded in this paper and cite their sources.
A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-absorption-charge-multiplication avalanche photodiodes. The dark count rate was observed to be a very weak function of temperature in the range from 77Kto300K. Various mechanisms for dark count generation were considered. Simulations of band-to-band tunneling in the In0.52Al0.48As multiplication layer were found to agree well with the experimental temperature dependence of dark count rate at various excess biases. To reduce tunneling-induced dark counts, a suitable design change to the detector structure is proposed.
No takes yet. Share an insight, caveat, or question.
Karve et al. (2005) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: