The breakdown probabilities of avalanche photodiodes (APDs) working in the Geiger mode are analyzed using a history-dependent analytical impact-ionization model [R. J. McIntyre, IEEE Trans. Electron Devices 46, 1623 (1999)]. The breakdown sharpness in devices with thin and thick multiplication regions is found to follow the same trend in GaAs, InAlAs, and InP material systems. Breakdown characteristics of InP and InAlAs are compared for their applications in photon counting at telecommunication wavelengths.
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Wang et al. (2003) studied this question.
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