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June 1, 1988Japanese Journal of Applied Physics

40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching

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Authors

TSTakao ShiokawaRIKENPKPil Hyon KimFrontier HospitalMHManabu Hamagaki

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Shiokawa et al. (1988) studied this question.

synapsesocial.com/papers/6a88215f054eefc4d776f51ehttps://doi.org/10.1143/jjap.27.l1160
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