Periodic grain-boundary formation in a poly-Si thin film crystallized by linearly polarized Nd:YAG pulse laser with an oblique incident angle

We investigated the periodic grain-boundary formation in the polycrystalline silicon film crystallized by a linearly polarized Nd:YAG (where YAG is yttrium aluminum garnet) pulse laser with an oblique incident angle θi=25°, compared with the normal incident angle θi=0. The alignment of the grain boundary was uncontrollable and fluctuated in the case of the oblique incident and large irradiation pulse number while that in the case of the normal incident was performed stably. It was found that the main cause for its low controllability was the nonphase matching between the periodic surface corrugation of the crystallized silicon film and the periodic temperature profile induced by the laser irradiation. Also, it was found that, in the case of θi=25°, the dominant periodic width of the grain boundary depended on the pulse number N. That is, it was around λ∕(1+sinθi) for small N≈10 and λ∕(1−sinθi) for large N≈100 at the laser wavelength of λ=532nm. In order to explain this dependence, we proposed a model to take into account the periodic corrugation height proportional to the molten volume of the silicon film, the impediment in interference between the incident beam and diffracted beam on the irradiated surface due to the corrugation height, and the reduction of the liquid surface roughness during melting-crystallization process due to liquid-silicon viscosity.