MOD approach for the growth of epitaxial CeO₂buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors

We have grown epitaxial CeO 2 buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni–3 at%W (Ni–W) substrates and heat-treated at 1100 °C in a gas mixture of Ar–4%H 2 for 15 min. Detailed x-ray studies indicate that CeO 2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8° and 7.5°, respectively. High temperature in situ XRD studies show that the nucleation of CeO 2 films starts at 600 °C and the growth completes within 5 min when heated at 1100 °C. SEM and AFM investigations of CeO 2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO 2 cap layers were deposited on MOD CeO 2 -buffered Ni–W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, J c , of about 1.5 MA cm −2 at 77 K and self-field was obtained on YBCO (PLD)/CeO 2 (sputtered)/YSZ (sputtered)/CeO 2 (spin-coated)/Ni–W.