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The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn–Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
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Wu et al. (1992) studied this question.
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