Growth of Cd1−xZnxTe by molecular beam epitaxy

Cd1−xZnxTe has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x-ray rocking curve half-widths are extremely broad for most ternary compositions. Attempts to modify the interface yield only modest and uneven improvement in rocking curve half-widths. The poor quality appears to be due to a phase separation.