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Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m ‐ or a ‐direction in III‐nitrides by means of X‐ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. After presenting the relevant elasticity relations we adopt a step model introduced by Segmüller and Blakeslee to nonpolar directions. This model allows a simulation of symmetrical 2θ - ω scans. We will discuss the possibilities and also the limitations of this model. Additionally, we present a method to determine concentrations by using the peak position of the zero order superlattice peak. Finally, we compare the methods using samples grown on m ‐plane SiC and bulk m ‐plane GaN.
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Bremers et al. (2010) studied this question.
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