Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO₃/Pt junctions

Metal/insulator/metal structures composed of active Al top electrodes (TEs) and oxygen-deficient Pr 0.7 Ca 0.3 MnO 3 (PCMO) insulator layers are prepared on platinized silicon substrates. The junction resistance exhibits an obvious negative differential resistance region in the first bias sweep and an irreversible increase from 2 to 100 MΩ in repeated ±4 V sweeps. The pulse duration needed to fully switch the junctions is found to be on the order of milliseconds. When 100–500 µs negative pulses are used, the junctions show an incomplete switch to the low resistance state (LRS) which exhibits fluctuating resistances. The fluctuation in the LRS is suppressed and the high-to-low resistance ratio increases gradually when the negative pulse duration is increased from 100 to 500 µs. For relaxed junctions, pulse switching experiments reveal that the LRS undergoes a dynamically stable process at the beginning and then reaches a lower and metastable resistance value. Resistance retention tests also indicate that the high resistance state is very stable, while the metastable LRS gradually relaxes to higher resistance values. The experimental results are discussed with the formation and dissociation of an interfacial AlO x layer at the interface between Al TEs and PCMO layers.