We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.
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Hamaguchi et al. (2006) studied this question.