The fabrication and performance of GaN-based micro-light emitting diode (μ-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 μm and center-to-center spacing 30 μm, giving an overall active area of the arrays of 80425 μm2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 μW per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Jeon et al. (2003) studied this question.