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June 20, 1985Electronics Letters

Selective etching characteristics of HF for Al x Ga 1-x As/GaAs

Xiao-Qiong Wu L. A. Coldren J. L. Merz

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Abstract

The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x≥0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.

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Cite This Study

Wu et al. (1985) studied this question.

synapsesocial.com/papers/6a8850446304c7fd8e4dff1b https://doi.org/10.1049/el:19850394

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