I n s i t u conductivity and Hall measurements of ultrathin nickel silicide layers on silicon(111)

The change of conductance has been measured during deposition of Ni on Si(111) under ultrahigh vacuum (UHV) conditions for the first time. The chemical as well as the structural analysis were carried out in situ by Auger electron spectroscopy and low-energy electron diffraction. Defined information on the reaction and ordering processes induced by thermal processing was obtained from in situ conductivity and Hall measurements carried out in the temperature range between 16 and 500 K. The measurements were performed in a specially designed UHV system.