Complex GaAs/AlGaAs nanostructures, constituted by a quantum dot sitting on a quantum disk, are fabricated. This was made possible by droplet epitaxy growth technique which allows for fine control of the crystallization kinetics, by means of As flux and substrate temperature, of nanometer-scale metallic Ga reservoirs deposited on the substrate. Such complex quantum nanostructures show good optical quality and the exciton recombination in both the dot and the disk could be detected by photoluminescence spectroscopy.
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Somaschini et al. (2012) studied this question.
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