Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113)

We present angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy results for the Schottky-barrier formation of Ga on p-type Si(113). For the first 0.08 monolayer of Ga, the band bending increases. For higher coverages, it decreases monotonically until it reaches its final value at about 2 monolayers. This change of band bending is found for a Si surface for the first time and supports a recent model calculation. The final barrier height is 0.32±{}0.10 eV, in good agreement with the values found for low-index surfaces.