The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling

Numerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results (in conjunction with the experimental data) imply that during room-temperature electron irradiation of Si the indirect production of divacancies can be more important than the direct production of V2 via the single-collision process.