Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

Using transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at Eᵥ+0.23, Eᵥ+0.38, and Ec-0.27 eV consistently appear in various samples, showing they are characteristic defects in boron-doped silicon. Many properties of the Eᵥ+0.23-eV level and the divacancy are the same, according to the present study and others. We correlated the Eᵥ+0.38-eV level to the vacancy-oxygen-carbon complex recently identified by Lee and Corbett using the EPR technique. The Ec-0.27-eV level could arise from an interstitial defect of oxygen and boron; and a new level at Eᵥ+0.30 eV arising upon its disappearance could be a vacancy defect trapping an oxygen atom and a boron. Several additional defect levels are reported.