Lattice distortions for arsenic in single-crystal silicon

Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 ±{} 0.02 {}, which are 0.06 {} (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 ±{} 0.02 {}, only 0.01 {} (0.3%) greater than the corresponding Si-to-Si distance.