Hot-electron effect in Si(001) MOSFET's has been studied at 4.2 K and 1.1 K by use of negative magnetoresistance as a thermometer for electron temperature. Heat transfer from electron system to phonon system is explained by use of deformation potential constants in Si bulk. Possible ultimate electron mobility in Si MOSFET's is discussed.
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Kawaguchi et al. (1982) studied this question.
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