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The emission of episide down bonded InAsSbP/In(Ga)As/n + -InAs and graded InAsSb(P) light-emitting diodes (LEDs) with λ max = 3.3–5.5 μm has been modified with an ‘internal’ Fabry–Perot cavity or bandpass filter attached to the LED with an optical glue. Positive and negative emission with the full width at half-maximum close to that of the filter (8–20 meV) have been obtained in the 20–50 °C temperature range.
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Aidaraliev et al. (2003) studied this question.
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