Conduction- or valence-band discontinuities occurring at the junction of two heterogeneous semiconductors can be eliminated by appropriate doping of the interfacial region. We show by analytic and self-consistent calculations that simultaneous modulation doping and parabolic compositional grading result in flat band-edge potentials. The new concept is applied to distributed Bragg reflectors for vertical cavity lasers. The structures grown by molecular-beam epitaxy exhibit significantly lower resistances as compared to step-graded distributed Bragg reflectors.
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Schubert et al. (1992) studied this question.
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