The paper presents a distributed model for high-frequency MESFETs and compares experimentalS-parameter measurements to 26 GHz with distributed and lumped models. The concept of distributed effects within a MESFET is used to modify the Fukui noise model, and good agreement has been obtained between high-frequency (35 GHz) noise measurements and the modified Fukui analysis.
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Oxley et al. (1986) studied this question.
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