Conventional methods for noise parameter measurement for linear noisy two-ports have been improved by introducing a computational method for evaluating measured admittance errors. Derivation and comparison with a conventional method are given. Noise parameters of a packaged 0.5-mu m gate-length GaAs MESFET (NE38806) were successfully measured using the proposed technique.
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Mitama et al. (1979) studied this question.
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