Ga-doped In 2 O 3 (ZnO) 3 nanobelts were successfully fabricated via a simple chemical vapor deposition (CVD) process. The morphology, microstructure, and composition of the nanobelts were characterized by scanning electron microscopy, high resolution transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectroscopy. The results confirm the formation of In 2 O 3 (ZnO) 3 superlattice nanobelts doped with Ga. The field-emission studies show a low turn-on electrical field, high field enhancement factor, and a good stability of the emission current. These results are valuable for the design, fabrication, and optimization of field emitters.
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Wu et al. (2011) studied this question.
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