The effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field. A density of free carriers higher than the background doping will easily occur in space-charge regions during reverse recovery of high-voltage silicon devices. As a result, a high electric-field strength combined with avalanche generation occurs at the p-n junction. However, if a second region with high electric-field strength arises at the nn+-junction, the situation can become critical. If the second electric-field peak can be suppressed, it is possible to make diodes that are very rugged and show a significantly improved soft-recovery behavior.
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Lutz et al. (2009) studied this question.
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