A monolithic limiting amplifier for high speed optical transmission systems has been fabricated using a 0.2 µm enhancement/depletion AlGaAs/GaAs-HEMT (fT = 60/55 GHz). The IC has a bandwidth of 30 GHz with a differential gain of 36 dB. The circuit features a differential configuration with active source followers to increase bandwidth. The power consumption is 700 mW using a single supply voltage of –4 V.
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Lao et al. (1997) studied this question.
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