The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (<500 °C), and nitrogen and carbon contamination of the films was negligible. The films had typical stoichiometric metal phosphide properties of high electrical conductivity, hardness, and chemical resistivity.
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Blackman et al. (2004) studied this question.
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