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We have studied the optical properties of a short-period superlattice composed of 20.4-A{} GaAs and 14.7-A{} AlAs layers. The superlattice behaves as an indirect-gap material. A slow and nonexponential decay of the luminescence can be interpreted as the emission from the {Λ} indirect excitons localized at the GaAs/AlAs interfaces. The temperature dependence of the exciton decay time can be explained in terms of a transition by phonon-assisted tunneling, followed by a nonradiative transition.
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Minami et al. (1987) studied this question.
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