We consider the effect of reducing the density of final hole states for Auger processes on the Auger rate at room temperature and 77K at densities near lasing thresholds. The system of interest is a strain-compensated superlattice based on the InAs/GaInSb material system with a 3.7 microm band gap. At 77K the Auger lifetime is reduced by two orders of magnitude, while the change at 300K is less than a factor of two. We conclude that final-state optimization in this particular structure, while pronounced at 77K, has little effect at 300K.
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Flatté et al. (1998) studied this question.
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