Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlₓGa_1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 {} were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.
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Jarosik et al. (1985) studied this question.
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