A rate equation analysis of the direct-current modulation response of intersubband semiconductor lasers is reported using a rate equation model for a triple quantum well structure. It is demonstrated that terahertz modulation bandwidths may be achievable due to the picosecond carrier lifetimes which are characteristic of such structures. A novel feature of the modulation response of intersubband semiconductor lasers is the existence of an optimum output power for achieving maximum modulation bandwidth in a given structure. Further optimisation of the modulation performance is achievable via appropriate design of the coupled quantum well structure.
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Cheung et al. (1997) studied this question.
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