The transverse distribution of intensity noise in the far field of semiconductor lasers has been experimentally studied. For a single-mode edge-emitting laser, it has been found that a large amount of noise is present in higher-order nonlasing transverse modes parallel to the diode junction. In the case of a spatially multimode vertical-cavity surface-emitting laser, each mode exhibits a large noise, but these noises show strong anticorrelations.
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Hermier et al. (1999) studied this question.
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