TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer, Xie, Qi, Musschoot, Jan, Schaekers, Marc, Caymax, Matty, Delabie, Annelies, Lin, Dennis, Qu, Xin-Ping, Jiang, Yu-Long, den Berghe, Sven Van, Detavernier, Christophe
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Xie et al. (2011) studied this question.
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