We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference Δ T = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μ V in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.
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Thierschmann et al. (2013) studied this question.
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