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April 15, 2011IEEE Electron Device Letters

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

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Authors

SKSeshadri KolluriAnalog Devices (United States)SKS. KellerUniversity of California, Santa BarbaraSteven P. DenBaarsSteven P. DenBaarsLinköping University

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Kolluri et al. (2011) studied this question.

synapsesocial.com/papers/6a89159b658c52aebb4d223ehttps://doi.org/10.1109/led.2011.2119462
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