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Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz, Singisetti, Uttam, Wong, Man Hoi, Dasgupta, Sansaptak, Speck, James S., Mishra, Umesh K.
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Singisetti et al. (2011) studied this question.
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