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June 1, 2006IEEE Electron Device Letters

High-performance E-mode AlGaN/GaN HEMTs

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Authors

TPTomás PalaciosMassachusetts Institute of TechnologyCSChang Soo SuhTexas Instruments (United States)ACA. ChakrabortyUniversity of Calcutta

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Palacios et al. (2006) studied this question.

synapsesocial.com/papers/69daaa4a8988aeabbe687467https://doi.org/10.1109/led.2006.874761
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