We have measured the temperature dependence of the electrical resistivity ρ of Cu – SiO2 co-sputtered films in the range 4–300 K for metal volume fractions between 0.5 – 0.8. The films range between the metallic (ρ ~ T) and "strongly-localized" (log ρ ~ T−1/2) regimes. In the intermediate regime we find a complex behaviour for ρ(T) with a concentration dependent local minimum that separates the low temperature ρ ~ log T and the high temperature ρ ~ T behaviour. We attribute this to temperature dependent localization of electrons.
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Savvides et al. (1982) studied this question.