We have shown that for a one-dimensional multijunction array with a broad junction length distribution, we can increase the mean threshold voltage Vth for a given maximal tunnel resistance without increasing the scatter of Vth. For two-dimensional arrays we can increase strongly the output of devices which do not behave as open circuits, without any loss on the scatter on Vth, and still increase the latter with respect to a single-island device. The experimental background which justified the calculation will be described, as our model needs the experimental distribution of the island dimensions and junction lengths. Such a result may either show a way to increase the threshold voltages for a given technology, or allow for larger and therefore more controllable dimensions, or even extend the choice of materials.
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Cordan et al. (1998) studied this question.
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