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The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.
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Yu et al. (1998) studied this question.
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