A method for economical prediction of substrate currents in submicron-scale MOSFETs is described and validated by comparison of simulation and experimental results. Two-dimensional energy transport simulation is used to obtain average electron energies and temperature, and hole transport is described using the standard drift-diffusion method. Relatively little computation time is required to give a physically correct picture of device operation on a SUN 3/60 or equivalent work station.
No takes yet. Share an insight, caveat, or question.
Takeda et al. (1991) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: