The low frequency noise behaviour of SOl n-MOSFETs operated at 4.2 K is reported for the first time and compared with room temperature behaviour. It is shown that the noise level increases by a factor of 3–5, and the kink-related noise overshoot becomes much more pronounced on cooling. These results are compared with the noise overshoot observed in bulk devices operating at 4.2 K and a similar explanation for the phenomenon is proposed.
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Simoen et al. (1992) studied this question.
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