Arsenic diffusion in silicon-on-insulator formed by deep oxygen implantation is studied by secondary ion mass spectroscopy and speading resistance measurements. An enhanced diffusivity as well as a pile-up phenomenon are observed in the thin silicon layer. The McNabb and Foster equations [Trans. TMS-AIME 22, 618 (1963)] for diffusion with trapping are solved in order to simulate this last effect.
No takes yet. Share an insight, caveat, or question.
Normand et al. (1989) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: