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October 1, 1982Journal of Applied Physics

Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics

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DAD.A. AntoniadisMassachusetts Institute of TechnologyIMI. MoskowitzClarkson University

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Antoniadis et al. (1982) studied this question.

synapsesocial.com/papers/6a897a75abe412682d92e80ehttps://doi.org/10.1063/1.330067
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