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November 1, 1980IEEE Transactions on Electron Devices

A two-dimensional analysis for MOSFET's fabricated on buried SiO2layer

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Authors

ESEiichi SanoHokkaido University of ScienceRKR. KasaiNTT (Japan)KOK. OhwadaHiroshima University

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Sano et al. (1980) studied this question.

synapsesocial.com/papers/6a8917f1d5f4e697bb1321dchttps://doi.org/10.1109/t-ed.1980.20147
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