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June 1, 1980Japanese Journal of Applied PhysicsOpen Access

TEM, AES and XPS Studies of Si Layer on Buried SiO2 Layer Formed by High-Dose Oxygen Ion-Implantation

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Authors

THT. HayashiSony (Taiwan)SMSatoshi MaeyamaTokyo Institute of TechnologySYShizuka YoshiiUbe (Japan)

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Hayashi et al. (1980) studied this question.

synapsesocial.com/papers/6a897bba1fb56efa37d4528dhttps://doi.org/10.1143/jjap.19.1111
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon1978 · 539 citations
  2. 2Nature and Annealing Behavior of Disorders in Ion Implanted Silicon1978 · 32 citations
  3. 3A study of silicon oxides prepared by oxygen implantation into silicon1977 · 56 citations