Experimental study demonstrates the fabrication of submicrometer silicon-gate NMOS devices using electron-beam lithography and dry etching, highlighting viability for high-density circuits.
Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
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Watts et al. (1981) studied this question.
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