By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4μm light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications. Tunnel heterojunctions separating emission regions add no measurable series resistance. Devices are demonstrated at room temperature with continuous wave output.
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Prineas et al. (2006) studied this question.
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