Answers are grounded in this paper and cite their sources.
A molecular beam epitaxy grown GalnAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 µm wavelength range with –0.3 V bias, 40 µA dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6 × 1010 cm·Hz1/2/W reported for a GaInAsSb detector. The measured responsivity compares well with k·p calculations.
No takes yet. Share an insight, caveat, or question.
Carter et al. (2000) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: